TC58NYG1S3HBAI6

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage
• Characteristics: Non-volatile, high-speed, low-power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Flash memory chip
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NAND Flash
• Capacity: Varies (e.g., 4GB, 8GB, 16GB)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The TC58NYG1S3HBAI6 has a standard pin configuration with the following pins: 1. Chip Enable (CE) 2. Serial Clock (SCLK) 3. Serial Data Input (SI) 4. Serial Data Output (SO) 5. Write Protect (WP) 6. Ground (GND) 7. Power Supply (VCC)

Functional Features

• High-speed data transfer rate
• Low power consumption during read/write operations
• Built-in error correction code (ECC) for data integrity
• Support for multiple block erase operations
• Hardware write protection feature
• Automatic sleep mode for power saving

Advantages

• Fast data transfer speed enhances overall system performance
• Low power consumption extends battery life in portable devices
• Error correction code ensures reliable data storage
• Multiple block erase capability allows efficient memory management
• Hardware write protection prevents accidental data modification
• Automatic sleep mode reduces power consumption when idle

Disadvantages

• Limited endurance compared to other memory technologies
• Higher cost per unit compared to traditional storage solutions
• Requires additional circuitry for interfacing with the host system

Working Principles

The TC58NYG1S3HBAI6 utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using different voltage levels. When data is written, the memory cells are programmed by applying specific voltage levels to the appropriate cells. Reading data involves sensing the voltage levels stored in the memory cells.

Detailed Application Field Plans

The TC58NYG1S3HBAI6 is commonly used in various electronic devices that require non-volatile memory storage, such as: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

• TC58NVG1S3HBAI6
• TC58NVG2S3HBAI6
• TC58NVG3S3HBAI6
• TC58NVG4S3HBAI6
• TC58NVG5S3HBAI6

These alternative models offer similar specifications and functionality but may differ in capacity or package type.

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