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SI2342DS-T1-GE3
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SI2342DS-T1-GE3

Product Overview

Category

The SI2342DS-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • Low on-resistance
  • High-speed switching
  • Low gate drive power
  • Small package size

Package

The SI2342DS-T1-GE3 is typically available in a small outline transistor (SOT-23) package.

Essence

This MOSFET is essential for efficient power management and control in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 2.3A
  • On-Resistance (Rds(on) Max): 0.065 Ohm
  • Power Dissipation (Pd): 1.25W
  • Threshold Voltage (Vgs): 1V - 2V
  • Gate-Source Voltage (Vgs): ±8V

Detailed Pin Configuration

The SI2342DS-T1-GE3 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Fast switching speed
  • Low power consumption
  • High efficiency
  • Reliable performance under varying operating conditions

Advantages

  • Compact size
  • Low on-resistance
  • Suitable for low-voltage applications
  • Enhanced thermal performance

Disadvantages

  • Limited maximum drain-source voltage
  • Sensitivity to electrostatic discharge (ESD)

Working Principles

The SI2342DS-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals.

Detailed Application Field Plans

The SI2342DS-T1-GE3 is widely used in: - Battery management systems - Portable electronic devices - LED lighting applications - Power supply units - Motor control circuits

Detailed and Complete Alternative Models

Some alternative models to the SI2342DS-T1-GE3 include: - SI2302DS-T1-GE3 - SI2319DS-T1-GE3 - SI2365DS-T1-GE3

In conclusion, the SI2342DS-T1-GE3 power MOSFET offers high performance and reliability in a compact package, making it suitable for a wide range of electronic applications.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af SI2342DS-T1-GE3 i tekniske løsninger

  1. What is the maximum drain-source voltage of SI2342DS-T1-GE3?

    • The maximum drain-source voltage of SI2342DS-T1-GE3 is 20V.

  2. What is the continuous drain current of SI2342DS-T1-GE3?

    • The continuous drain current of SI2342DS-T1-GE3 is 4.3A.

  3. What is the on-resistance of SI2342DS-T1-GE3?

    • The on-resistance of SI2342DS-T1-GE3 is typically 40mΩ.

  4. What is the gate threshold voltage of SI2342DS-T1-GE3?

    • The gate threshold voltage of SI2342DS-T1-GE3 is typically 1V.

  5. What is the power dissipation of SI2342DS-T1-GE3?

    • The power dissipation of SI2342DS-T1-GE3 is 1.25W.

  6. What are the typical applications for SI2342DS-T1-GE3?

    • SI2342DS-T1-GE3 is commonly used in load switching, power management, and battery protection applications.

  7. What is the operating temperature range of SI2342DS-T1-GE3?

    • The operating temperature range of SI2342DS-T1-GE3 is -55°C to 150°C.

  8. Is SI2342DS-T1-GE3 RoHS compliant?

    • Yes, SI2342DS-T1-GE3 is RoHS compliant.

  9. What is the package type of SI2342DS-T1-GE3?

    • SI2342DS-T1-GE3 comes in a SOT-23 package.

  10. What are the key features of SI2342DS-T1-GE3?

    • Some key features of SI2342DS-T1-GE3 include low on-resistance, fast switching speed, and ESD protection.