SI3905DV-T1-GE3
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electronic signals in power applications - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: D2PAK-7 - Essence: Enhancing power management in various electronic devices - Packaging/Quantity: Tape & Reel, 800 units per reel
Specifications: - Drain-Source Voltage (Vdss): 30V - Continuous Drain Current (Id): 100A - On-Resistance (Rds(on)): 1.8mΩ - Gate-Source Voltage (Vgs): ±20V - Power Dissipation (Pd): 200W
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source - Pin 4: N/C - Pin 5: Source - Pin 6: Drain - Pin 7: Gate
Functional Features: - Low on-resistance for minimal power loss - Fast switching speed for improved efficiency - Enhanced power management capabilities
Advantages: - High efficiency - Low on-resistance - Fast switching speed
Disadvantages: - Sensitive to voltage spikes - Requires careful handling during installation
Working Principles: The SI3905DV-T1-GE3 operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a suitable voltage is applied to the gate, the MOSFET allows current to flow, and when the gate voltage is removed, the current flow ceases.
Detailed Application Field Plans: - Power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters
Detailed and Complete Alternative Models: - SI2305DS-T1-GE3 - SI4435DY-T1-GE3 - SI7850DP-T1-GE3
This comprehensive entry provides an in-depth understanding of the SI3905DV-T1-GE3 Power MOSFET, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af SI3905DV-T1-GE3 i tekniske løsninger
What is the maximum voltage rating of SI3905DV-T1-GE3?
- The maximum voltage rating of SI3905DV-T1-GE3 is typically 30V.
What is the maximum continuous drain current of SI3905DV-T1-GE3?
- The maximum continuous drain current of SI3905DV-T1-GE3 is typically 3.7A.
What is the on-resistance (RDS(on)) of SI3905DV-T1-GE3?
- The on-resistance (RDS(on)) of SI3905DV-T1-GE3 is typically 18mΩ.
What are the typical applications for SI3905DV-T1-GE3?
- SI3905DV-T1-GE3 is commonly used in power management, load switching, and battery protection applications.
What is the operating temperature range of SI3905DV-T1-GE3?
- The operating temperature range of SI3905DV-T1-GE3 is typically -55°C to 150°C.
Does SI3905DV-T1-GE3 have built-in ESD protection?
- Yes, SI3905DV-T1-GE3 features built-in ESD protection, making it suitable for robust and reliable designs.
What is the package type of SI3905DV-T1-GE3?
- SI3905DV-T1-GE3 is available in a compact and space-saving PowerPAK® SC-70 package.
Is SI3905DV-T1-GE3 RoHS compliant?
- Yes, SI3905DV-T1-GE3 is RoHS compliant, meeting environmental standards.
Can SI3905DV-T1-GE3 be used in automotive applications?
- Yes, SI3905DV-T1-GE3 is suitable for automotive applications, offering high reliability and performance.
Are there any application notes or reference designs available for SI3905DV-T1-GE3?
- Yes, application notes and reference designs are available to assist in the implementation of SI3905DV-T1-GE3 in various technical solutions.