SI4501BDY-T1-GE3
Product Overview
The SI4501BDY-T1-GE3 belongs to the category of power MOSFETs and is commonly used in various electronic applications. This MOSFET is known for its high efficiency, low on-resistance, and compact package, making it suitable for power management in a wide range of devices. The SI4501BDY-T1-GE3 is typically packaged in a small outline package (SOP) and is available in tape and reel packaging.
Specifications
- Voltage Rating: 30V
- Continuous Drain Current: 9A
- On-Resistance: 0.014 ohms
- Package Type: SOP-8
- Packaging: Tape and Reel
Detailed Pin Configuration
The SI4501BDY-T1-GE3 features an SOP-8 package with the following pin configuration: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate
Functional Features
The SI4501BDY-T1-GE3 offers fast switching performance, low gate charge, and excellent thermal stability. These features make it suitable for high-frequency applications and efficient power management.
Advantages and Disadvantages
Advantages: - High efficiency - Low on-resistance - Fast switching speed - Excellent thermal performance
Disadvantages: - Sensitive to static electricity - Limited voltage rating
Working Principles
The SI4501BDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a voltage is applied to the gate terminal, the MOSFET allows or restricts the flow of current between the drain and source terminals, enabling precise control over power distribution.
Detailed Application Field Plans
The SI4501BDY-T1-GE3 is widely used in various applications, including: - Switching power supplies - DC-DC converters - Motor control - LED lighting - Battery management systems
Detailed and Complete Alternative Models
- SI2301DS-T1-GE3
- SI2333DDS-T1-GE3
- SI4435DDY-T1-GE3
- SI4562DY-T1-GE3
In summary, the SI4501BDY-T1-GE3 power MOSFET offers high performance and reliability, making it a popular choice for power management in diverse electronic devices and systems.
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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af SI4501BDY-T1-GE3 i tekniske løsninger
What is the SI4501BDY-T1-GE3?
- The SI4501BDY-T1-GE3 is a P-channel MOSFET designed for use in power management applications.
What is the maximum drain-source voltage of the SI4501BDY-T1-GE3?
- The maximum drain-source voltage is 20V.
What is the typical on-resistance of the SI4501BDY-T1-GE3?
- The typical on-resistance is 45mΩ at Vgs = -4.5V.
What are the typical applications for the SI4501BDY-T1-GE3?
- Common applications include load switching, battery protection, and power distribution.
What is the maximum continuous drain current of the SI4501BDY-T1-GE3?
- The maximum continuous drain current is 9.7A.
What is the gate threshold voltage of the SI4501BDY-T1-GE3?
- The gate threshold voltage typically ranges from -0.7V to -1.5V.
What is the operating temperature range of the SI4501BDY-T1-GE3?
- The operating temperature range is -55°C to 150°C.
Does the SI4501BDY-T1-GE3 require a heat sink for high-power applications?
- It is recommended to use a heat sink for high-power applications to ensure proper thermal management.
Can the SI4501BDY-T1-GE3 be used in automotive applications?
- Yes, the SI4501BDY-T1-GE3 is suitable for automotive applications due to its robust design and performance.
Is the SI4501BDY-T1-GE3 RoHS compliant?
- Yes, the SI4501BDY-T1-GE3 is RoHS compliant, making it suitable for environmentally conscious designs.