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SIHP11N80E-GE3
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SIHP11N80E-GE3

Introduction

The SIHP11N80E-GE3 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: The SIHP11N80E-GE3 is used as a switching device in power supplies, motor control, and other high voltage applications.
  • Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
  • Package: The SIHP11N80E-GE3 is typically available in a TO-220AB package.
  • Essence: Its essence lies in providing efficient power management and control in various electronic systems.
  • Packaging/Quantity: It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 800V
  • Current Rating: 11A
  • On-State Resistance: 0.65Ω
  • Gate Charge: 22nC
  • Operating Temperature: -55°C to 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3

Detailed Pin Configuration

The SIHP11N80E-GE3 features a standard TO-220AB pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low On-State Resistance: Enables efficient power conduction and reduced power dissipation.
  • High Switching Speed: Facilitates rapid switching transitions, suitable for high-frequency applications.
  • Low Gate Charge: Allows for minimal drive power requirements and improved efficiency.

Advantages and Disadvantages

Advantages

  • High Voltage Rating: Suitable for high voltage applications.
  • Low Conduction Losses: Enhances overall system efficiency.
  • Fast Switching Speed: Enables high-frequency operation.

Disadvantages

  • Sensitivity to Overcurrent: Requires robust protection circuitry in high-current applications.
  • Gate Drive Complexity: May require careful consideration of gate drive circuit design for optimal performance.

Working Principles

The SIHP11N80E-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing current to flow through.

Detailed Application Field Plans

The SIHP11N80E-GE3 finds extensive application in the following areas: - Switched-Mode Power Supplies (SMPS) - Motor Control Systems - Inverters and Converters - Electronic Ballasts - Industrial and Automotive Electronics

Detailed and Complete Alternative Models

  • Alternative Model 1: IRFP4668PBF
    • Voltage Rating: 800V
    • Current Rating: 14A
    • Package: TO-247AC
  • Alternative Model 2: FDPF18N50T
    • Voltage Rating: 500V
    • Current Rating: 18A
    • Package: TO-220F

In conclusion, the SIHP11N80E-GE3 power MOSFET serves as a crucial component in various electronic systems, offering high voltage capability, low on-state resistance, and fast switching characteristics. Its application spans across diverse industries, contributing to efficient power management and control.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af SIHP11N80E-GE3 i tekniske løsninger

  1. What is the maximum drain-source voltage of SIHP11N80E-GE3?

    • The maximum drain-source voltage of SIHP11N80E-GE3 is 800V.

  2. What is the continuous drain current rating of SIHP11N80E-GE3?

    • The continuous drain current rating of SIHP11N80E-GE3 is 11A.

  3. What is the on-resistance of SIHP11N80E-GE3?

    • The on-resistance of SIHP11N80E-GE3 is typically 0.65 ohms.

  4. What is the gate threshold voltage of SIHP11N80E-GE3?

    • The gate threshold voltage of SIHP11N80E-GE3 is typically 2.5V.

  5. What is the power dissipation of SIHP11N80E-GE3?

    • The power dissipation of SIHP11N80E-GE3 is typically 250W.

  6. What are the typical applications for SIHP11N80E-GE3?

    • SIHP11N80E-GE3 is commonly used in applications such as power supplies, motor drives, and inverters.

  7. What is the operating temperature range of SIHP11N80E-GE3?

    • The operating temperature range of SIHP11N80E-GE3 is -55°C to 150°C.

  8. Does SIHP11N80E-GE3 have built-in protection features?

    • Yes, SIHP11N80E-GE3 has built-in protection features such as overcurrent protection and thermal shutdown.

  9. Is SIHP11N80E-GE3 suitable for high-frequency switching applications?

    • Yes, SIHP11N80E-GE3 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.

  10. What are the recommended mounting and soldering techniques for SIHP11N80E-GE3?

    • It is recommended to follow the guidelines provided in the datasheet for proper mounting and soldering of SIHP11N80E-GE3, including using appropriate heatsinking methods and soldering temperatures.