SIR460DP-T1-GE3
Product Overview
Category
The SIR460DP-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and power switching.
Characteristics
- High efficiency
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIR460DP-T1-GE3 is typically available in a DPAK (TO-252) package.
Essence
This MOSFET is essential for efficient power control and management in various electronic systems.
Packaging/Quantity
It is usually packaged in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 15A
- RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 28nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The SIR460DP-T1-GE3 features a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low on-resistance for minimal power dissipation
- Fast switching speed for improved efficiency
- High current handling capability for robust performance
Advantages
- High efficiency and low power dissipation
- Suitable for high-frequency switching applications
- Robust construction for reliable operation in demanding environments
Disadvantages
- May require careful consideration of heat dissipation in high-power applications
- Higher cost compared to traditional bipolar transistors
Working Principles
The SIR460DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The SIR460DP-T1-GE3 is well-suited for use in: - Switching power supplies - Motor control systems - LED lighting applications - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to the SIR460DP-T1-GE3 include: - IRF540N - FDP8870 - AOD4184
In conclusion, the SIR460DP-T1-GE3 power MOSFET offers high efficiency, fast switching, and robust performance, making it an ideal choice for various power management applications.
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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af SIR460DP-T1-GE3 i tekniske løsninger
What is the maximum operating temperature of SIR460DP-T1-GE3?
- The maximum operating temperature of SIR460DP-T1-GE3 is typically 150°C.
What is the typical forward voltage drop of SIR460DP-T1-GE3?
- The typical forward voltage drop of SIR460DP-T1-GE3 is around 0.75V at a forward current of 10A.
What is the reverse recovery time of SIR460DP-T1-GE3?
- The reverse recovery time of SIR460DP-T1-GE3 is typically 19ns.
What are the recommended applications for SIR460DP-T1-GE3?
- SIR460DP-T1-GE3 is commonly used in synchronous rectification, DC-DC converters, and motor control applications.
What is the maximum continuous drain current of SIR460DP-T1-GE3?
- The maximum continuous drain current of SIR460DP-T1-GE3 is 40A.
Does SIR460DP-T1-GE3 have an integrated Schottky diode?
- No, SIR460DP-T1-GE3 does not have an integrated Schottky diode.
What is the gate threshold voltage of SIR460DP-T1-GE3?
- The gate threshold voltage of SIR460DP-T1-GE3 is typically 2.35V.
Is SIR460DP-T1-GE3 suitable for high-frequency switching applications?
- Yes, SIR460DP-T1-GE3 is suitable for high-frequency switching due to its fast switching characteristics.
What is the typical on-state resistance of SIR460DP-T1-GE3?
- The typical on-state resistance of SIR460DP-T1-GE3 is 4.6mΩ.
Does SIR460DP-T1-GE3 require a heatsink for operation?
- It is recommended to use a heatsink for SIR460DP-T1-GE3 when operating at high currents or in elevated temperature environments to ensure optimal thermal performance.