SQD100N04-3M6_GE3
Product Overview
Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-current, high-frequency circuits
Characteristics: High current handling capability, low on-state resistance, fast switching speed
Package: DPAK (TO-252)
Essence: Power MOSFET for efficient power management
Packaging/Quantity: Tape & Reel, 2500 units per reel
Specifications
- Voltage Rating: 40V
- Current Rating: 100A
- On-State Resistance: 3mΩ
- Gate Threshold Voltage: 2V
- Power Dissipation: 160W
Detailed Pin Configuration
The SQD100N04-3M6_GE3 follows the standard pin configuration for a DPAK package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-state resistance for minimal power loss
- Fast switching speed for efficient operation
- High current handling capability for demanding applications
Advantages and Disadvantages
Advantages: - Efficient power management - Suitable for high-current, high-frequency circuits - Low power dissipation
Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly
Working Principles
The SQD100N04-3M6_GE3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
This Power MOSFET is ideal for use in various applications including: - Switched-mode power supplies - Motor control circuits - High-frequency DC-DC converters - Class D audio amplifiers
Detailed and Complete Alternative Models
- IRF1010E - 60V, 84A, 12mΩ, TO-220 package
- FDP8878 - 30V, 120A, 4.5mΩ, DPAK package
- STP55NF06L - 60V, 50A, 19mΩ, DPAK package
This completes the entry for SQD100N04-3M6_GE3, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af SQD100N04-3M6_GE3 i tekniske løsninger
What is the maximum drain-source voltage for SQD100N04-3M6_GE3?
- The maximum drain-source voltage for SQD100N04-3M6_GE3 is 40V.
What is the continuous drain current rating of SQD100N04-3M6_GE3?
- The continuous drain current rating of SQD100N04-3M6_GE3 is 100A.
What is the on-resistance (RDS(on)) of SQD100N04-3M6_GE3?
- The on-resistance (RDS(on)) of SQD100N04-3M6_GE3 is typically 3.6mΩ at VGS = 10V.
Can SQD100N04-3M6_GE3 be used in automotive applications?
- Yes, SQD100N04-3M6_GE3 is suitable for automotive applications.
What is the operating temperature range for SQD100N04-3M6_GE3?
- The operating temperature range for SQD100N04-3M6_GE3 is -55°C to 175°C.
Does SQD100N04-3M6_GE3 require a heat sink for operation?
- It is recommended to use a heat sink for optimal performance, especially in high-power applications.
Is SQD100N04-3M6_GE3 suitable for switching applications?
- Yes, SQD100N04-3M6_GE3 is well-suited for switching applications due to its low RDS(on) and high current rating.
What is the gate-source voltage (VGS) required for SQD100N04-3M6_GE3 to operate?
- The gate-source voltage (VGS) required for SQD100N04-3M6_GE3 is typically 10V.
Can SQD100N04-3M6_GE3 be used in power supply designs?
- Yes, SQD100N04-3M6_GE3 can be used in power supply designs, particularly in high-current applications.
Is SQD100N04-3M6_GE3 compatible with standard MOSFET driver ICs?
- Yes, SQD100N04-3M6_GE3 is compatible with standard MOSFET driver ICs and can be easily integrated into existing designs.