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SQD30N05-20L_GE3

SQD30N05-20L_GE3

Product Overview

Category

The SQD30N05-20L_GE3 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SQD30N05-20L_GE3 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 30A
  • On-Resistance (RDS(on)): 20mΩ
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SQD30N05-20L_GE3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance ensures minimal power loss during operation.
  • Fast switching speed enables efficient control in switching circuits.

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Reliable performance in power management applications

Disadvantages

  • May require careful handling due to sensitivity to static electricity
  • Heat dissipation considerations may be necessary in high-power applications

Working Principles

The SQD30N05-20L_GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SQD30N05-20L_GE3 is widely used in: - Switching power supplies - Motor control - LED lighting - Battery management systems - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SQD30N05-20L_GE3 include: - IRF3205 - FDP8870 - STP55NF06L

In conclusion, the SQD30N05-20L_GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af SQD30N05-20L_GE3 i tekniske løsninger

  1. What is the maximum drain-source voltage of SQD30N05-20L_GE3?

    • The maximum drain-source voltage of SQD30N05-20L_GE3 is 55V.
  2. What is the continuous drain current rating of SQD30N05-20L_GE3?

    • The continuous drain current rating of SQD30N05-20L_GE3 is 30A.
  3. What is the on-resistance of SQD30N05-20L_GE3?

    • The on-resistance of SQD30N05-20L_GE3 is typically 20mΩ.
  4. Can SQD30N05-20L_GE3 be used for high-frequency switching applications?

    • Yes, SQD30N05-20L_GE3 can be used for high-frequency switching applications due to its low on-resistance.
  5. What is the gate threshold voltage of SQD30N05-20L_GE3?

    • The gate threshold voltage of SQD30N05-20L_GE3 is typically 2.5V.
  6. Is SQD30N05-20L_GE3 suitable for automotive applications?

    • Yes, SQD30N05-20L_GE3 is suitable for automotive applications as it meets automotive quality and reliability standards.
  7. Does SQD30N05-20L_GE3 have built-in protection features?

    • SQD30N05-20L_GE3 does not have built-in protection features and may require external circuitry for protection.
  8. What is the operating temperature range of SQD30N05-20L_GE3?

    • The operating temperature range of SQD30N05-20L_GE3 is typically -55°C to 175°C.
  9. Can SQD30N05-20L_GE3 be used in power management applications?

    • Yes, SQD30N05-20L_GE3 can be used in power management applications due to its high current handling capability.
  10. Is SQD30N05-20L_GE3 RoHS compliant?

    • Yes, SQD30N05-20L_GE3 is RoHS compliant, making it suitable for environmentally friendly designs.