SQJ850EP-T1_GE3

Product Overview

Category: Semiconductor
Use: Power Management
Characteristics: High efficiency, compact design
Package: TO-263-7L
Essence: Efficient power MOSFET
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

• Voltage Rating: 30V
• Current Rating: 40A
• RDS(ON): 2.5mΩ
• Gate Charge: 8.6nC
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

1. Gate
2. Source
3. Source
4. Source
5. Drain
6. Drain
7. Drain

Functional Features

• Low RDS(ON) for high efficiency
• Fast switching speed
• Low gate charge for reduced power loss
• Avalanche energy rated

Advantages and Disadvantages

Advantages: - High efficiency - Compact design - Fast switching speed

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to overvoltage conditions

Working Principles

The SQJ850EP-T1_GE3 operates by controlling the flow of current between the source and drain terminals using the gate voltage. When a sufficient gate voltage is applied, the MOSFET allows current to flow through, enabling efficient power management.

Detailed Application Field Plans

This MOSFET is ideal for use in various power management applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

1. IRF3205
2. FDP8870
3. AOD4184

In conclusion, the SQJ850EP-T1_GE3 is a high-performance power MOSFET designed for efficient power management in various applications. Its compact design and high efficiency make it a preferred choice for modern power electronics designs.

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