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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Varenummer
NCP5106BDR2G
Kategori
Power Chip > Gate Driver IC
Producent/Mærke
onsemi (Ansemi)
Indkapsling
SOIC-8-150mil
Pakning
taping
Antal pakker
2500
Beskrivelse
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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På lager 75348 PCS
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Nøgleord afNCP5106BDR2G
NCP5106BDR2G Elektroniske komponenter
NCP5106BDR2G Salg
NCP5106BDR2G Leverandør
NCP5106BDR2G Distributør
NCP5106BDR2G Datatabel
NCP5106BDR2G Fotos
NCP5106BDR2G Pris
NCP5106BDR2G Tilbud
NCP5106BDR2G Laveste pris
NCP5106BDR2G Søg
NCP5106BDR2G Indkøb
NCP5106BDR2G Chip