Toshiba Semiconductor and Storage
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RN4987FE,LF(CT
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RN4987FE,LF(CT

TRANS NPN/PNP PREBIAS 0.1W ES6
Varenummer
RN4987FE,LF(CT
Producent/Mærke
Toshiba Semiconductor and Storage
Del status
Active
Monteringstype
Surface Mount
Pakke/etui
SOT-563, SOT-666
Effekt - Maks
100mW
Leverandørenhedspakke
ES6
Transistor type
1 NPN, 1 PNP - Pre-Biased (Dual)
Aktuel - samler (Ic) (maks.)
100mA
Spænding - kollektoremitter-nedbrud (maks.)
50V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Nuværende - Collector Cutoff (maks.)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Frekvens - Overgang
250MHz, 200MHz
Modstand - base (R1)
10 kOhms
Modstand - Emitter Base (R2)
47 kOhms
Anmod om tilbud
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På lager 47022 PCS
Kontakt information
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