Toshiba Semiconductor and Storage
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TK12A60W,S4VX
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TK12A60W,S4VX

MOSFET N CH 600V 11.5A TO-220SIS
Varenummer
TK12A60W,S4VX
Producent/Mærke
Toshiba Semiconductor and Storage
Serie
DTMOSIV
Del status
Active
Emballage
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstype
Through Hole
Pakke/etui
TO-220-3 Full Pack
Leverandørenhedspakke
TO-220SIS
Effekttab (maks.)
35W (Tc)
FET type
N-Channel
FET-funktion
Super Junction
Dræn til kildespænding (Vdss)
600V
Strøm - Kontinuerligt dræn (Id) @ 25�C
11.5A (Ta)
Rds On (Max) @ Id, Vgs
300 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Input Kapacitans (Ciss) (Max) @ Vds
890pF @ 300V
Drivspænding (Max Rds On, Min Rds On)
10V
Vgs (maks.)
±30V
Anmod om tilbud
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