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SIR838DP-T1-GE3
Introduction
The SIR838DP-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and functional features.
Basic Information Overview
- Category: Semiconductor Device
- Use: Power MOSFET for electronic applications
- Characteristics: High power handling capacity, low on-resistance, fast switching speed
- Package: TO-252-3 (DPAK)
- Essence: Efficient power management and control
- Packaging/Quantity: Typically available in reels or tubes with varying quantities
Specifications
- Voltage Rating: [Specify voltage rating]
- Current Rating: [Specify current rating]
- On-Resistance: [Specify on-resistance]
- Gate Threshold Voltage: [Specify gate threshold voltage]
- Operating Temperature Range: [Specify operating temperature range]
Detailed Pin Configuration
The SIR838DP-T1-GE3 follows the standard pin configuration for a DPAK package:
1. Source
2. Gate
3. Drain
Functional Features
- High power handling capacity
- Low on-resistance for minimal power loss
- Fast switching speed for efficient operation
Advantages and Disadvantages
Advantages
- Efficient power management
- Suitable for high-power applications
- Fast switching speed enhances performance
Disadvantages
- May require additional heat dissipation in high-power applications
- Sensitivity to overvoltage conditions
Working Principles
The SIR838DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the source and drain terminals.
Detailed Application Field Plans
The SIR838DP-T1-GE3 finds extensive use in the following application fields:
- Switching power supplies
- Motor control systems
- LED lighting
- Battery management systems
Detailed and Complete Alternative Models
- [Alternative Model 1]: [Brief description]
- [Alternative Model 2]: [Brief description]
- [Alternative Model 3]: [Brief description]
In conclusion, the SIR838DP-T1-GE3 power MOSFET offers efficient power management and control capabilities, making it a valuable component in various electronic applications.
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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af SIR838DP-T1-GE3 i tekniske løsninger
What is the maximum operating temperature of SIR838DP-T1-GE3?
- The maximum operating temperature of SIR838DP-T1-GE3 is 150°C.
What is the typical input capacitance of SIR838DP-T1-GE3?
- The typical input capacitance of SIR838DP-T1-GE3 is 3200pF.
What is the typical on-state resistance of SIR838DP-T1-GE3?
- The typical on-state resistance of SIR838DP-T1-GE3 is 8.5mΩ.
What is the maximum drain-source voltage of SIR838DP-T1-GE3?
- The maximum drain-source voltage of SIR838DP-T1-GE3 is 30V.
What are the typical applications for SIR838DP-T1-GE3?
- SIR838DP-T1-GE3 is commonly used in load switching, power management, and battery protection applications.
What is the typical gate charge of SIR838DP-T1-GE3?
- The typical gate charge of SIR838DP-T1-GE3 is 7.5nC.
What is the maximum continuous drain current of SIR838DP-T1-GE3?
- The maximum continuous drain current of SIR838DP-T1-GE3 is 100A.
What is the typical threshold voltage of SIR838DP-T1-GE3?
- The typical threshold voltage of SIR838DP-T1-GE3 is 1.35V.
What is the typical reverse recovery time of SIR838DP-T1-GE3?
- The typical reverse recovery time of SIR838DP-T1-GE3 is 15ns.
What is the package type of SIR838DP-T1-GE3?
- SIR838DP-T1-GE3 comes in a PowerPAK® SO-8 package.