NXP USA Inc.
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2N7000,126
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2N7000,126

MOSFET N-CH 60V 300MA TO-92
Varenummer
2N7000,126
Producent/Mærke
NXP USA Inc.
Serie
TrenchMOS™
Del status
Obsolete
Emballage
Tape & Box (TB)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
-55°C ~ 150°C (TJ)
Monteringstype
Through Hole
Pakke/etui
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Leverandørenhedspakke
TO-92-3
Effekttab (maks.)
830mW (Ta)
FET type
N-Channel
FET-funktion
-
Dræn til kildespænding (Vdss)
60V
Strøm - Kontinuerligt dræn (Id) @ 25�C
300mA (Tc)
Rds On (Max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Kapacitans (Ciss) (Max) @ Vds
40pF @ 10V
Drivspænding (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (maks.)
±30V
Anmod om tilbud
Udfyld venligst alle påkrævede felter og klik på "SEND", vi kontakter dig om 12 timer via e-mail. Hvis du har problemer, bedes du efterlade beskeder eller e-mail til [email protected], vil vi svare hurtigst muligt.
På lager 15106 PCS
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