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FQP33N10L
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FQP33N10L

MOSFET N-CH 100V 33A TO-220
Varenummer
FQP33N10L
Producent/Mærke
ON Semiconductor
Serie
QFET®
Del status
Obsolete
Emballage
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
-55°C ~ 175°C (TJ)
Monteringstype
Through Hole
Pakke/etui
TO-220-3
Leverandørenhedspakke
TO-220-3
Effekttab (maks.)
127W (Tc)
FET type
N-Channel
FET-funktion
-
Dræn til kildespænding (Vdss)
100V
Strøm - Kontinuerligt dræn (Id) @ 25�C
33A (Tc)
Rds On (Max) @ Id, Vgs
52 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40nC @ 5V
Input Kapacitans (Ciss) (Max) @ Vds
1630pF @ 25V
Drivspænding (Max Rds On, Min Rds On)
5V, 10V
Vgs (maks.)
±20V
Anmod om tilbud
Udfyld venligst alle påkrævede felter og klik på "SEND", vi kontakter dig om 12 timer via e-mail. Hvis du har problemer, bedes du efterlade beskeder eller e-mail til [email protected], vil vi svare hurtigst muligt.
På lager 17751 PCS
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Nøgleord afFQP33N10L
FQP33N10L Elektroniske komponenter
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FQP33N10L Chip