Toshiba Semiconductor and Storage
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TK13E25D,S1X(S
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TK13E25D,S1X(S

MOSFET N-CH 250V 13A TO-220AB
Varenummer
TK13E25D,S1X(S
Producent/Mærke
Toshiba Semiconductor and Storage
Serie
-
Del status
Active
Emballage
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstype
Through Hole
Pakke/etui
TO-220-3
Leverandørenhedspakke
TO-220-3
Effekttab (maks.)
102W (Tc)
FET type
N-Channel
FET-funktion
-
Dræn til kildespænding (Vdss)
250V
Strøm - Kontinuerligt dræn (Id) @ 25�C
13A (Ta)
Rds On (Max) @ Id, Vgs
250 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Input Kapacitans (Ciss) (Max) @ Vds
1100pF @ 100V
Drivspænding (Max Rds On, Min Rds On)
10V
Vgs (maks.)
±20V
Anmod om tilbud
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