Toshiba Semiconductor and Storage
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TK35N65W,S1F
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TK35N65W,S1F

MOSFET N-CH 650V 35A TO-247
Varenummer
TK35N65W,S1F
Producent/Mærke
Toshiba Semiconductor and Storage
Serie
DTMOSIV
Del status
Active
Emballage
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstype
Through Hole
Pakke/etui
TO-247-3
Leverandørenhedspakke
TO-247
Effekttab (maks.)
270W (Tc)
FET type
N-Channel
FET-funktion
-
Dræn til kildespænding (Vdss)
650V
Strøm - Kontinuerligt dræn (Id) @ 25�C
35A (Ta)
Rds On (Max) @ Id, Vgs
80 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Input Kapacitans (Ciss) (Max) @ Vds
4100pF @ 300V
Drivspænding (Max Rds On, Min Rds On)
10V
Vgs (maks.)
±30V
Anmod om tilbud
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