Toshiba Semiconductor and Storage
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TK4A60DA(STA4,Q,M)
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TK4A60DA(STA4,Q,M)

MOSFET N-CH 600V 3.5A TO220SIS
Varenummer
TK4A60DA(STA4,Q,M)
Producent/Mærke
Toshiba Semiconductor and Storage
Serie
π-MOSVII
Del status
Active
Emballage
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstype
Through Hole
Pakke/etui
TO-220-3 Full Pack
Leverandørenhedspakke
TO-220SIS
Effekttab (maks.)
-
FET type
N-Channel
FET-funktion
-
Dræn til kildespænding (Vdss)
600V
Strøm - Kontinuerligt dræn (Id) @ 25�C
3.5A (Ta)
Rds On (Max) @ Id, Vgs
2.2 Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Input Kapacitans (Ciss) (Max) @ Vds
490pF @ 25V
Drivspænding (Max Rds On, Min Rds On)
10V
Vgs (maks.)
±30V
Anmod om tilbud
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