Toshiba Semiconductor and Storage
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TPN2010FNH,L1Q
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TPN2010FNH,L1Q

MOSFET N-CH 250V 5.6A 8TSON
Varenummer
TPN2010FNH,L1Q
Producent/Mærke
Toshiba Semiconductor and Storage
Serie
U-MOSVIII-H
Del status
Active
Emballage
Digi-Reel®
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstype
Surface Mount
Pakke/etui
8-PowerVDFN
Leverandørenhedspakke
8-TSON Advance (3.3x3.3)
Effekttab (maks.)
700mW (Ta), 39W (Tc)
FET type
N-Channel
FET-funktion
-
Dræn til kildespænding (Vdss)
250V
Strøm - Kontinuerligt dræn (Id) @ 25�C
5.6A (Ta)
Rds On (Max) @ Id, Vgs
198 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
7nC @ 10V
Input Kapacitans (Ciss) (Max) @ Vds
600pF @ 100V
Drivspænding (Max Rds On, Min Rds On)
10V
Vgs (maks.)
±20V
Anmod om tilbud
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